| PART |
Description |
Maker |
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF909WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
NXP Semiconductors
|
| 3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
